FW332 no.7134-1/6 features ? low on-resistance. ? ultrahigh-speed switching. ? composite type with an n-channel mosfet and a p- channel mosfet driving from a 4v supply voltage contained in a single package. ? high-density mounting. specifications absolute maximum ratings at ta=25 c parameter symbol conditions ratings unit n-channel p-channel drain-to-source voltage v dss 30 --30 v gate-to-source voltage v gss 20 20 v drain current (dc) i d 4 --3 a drain current (pulse) i dp pw 10 m s, duty cycle 1% 16 --12 a allowable power dissipation p d mounted on a ceramic board (2000mm 2 5 0.8mm)1unit 1.4 w total dissipation p t mounted on a ceramic board (2000mm 2 5 0.8mm) 1.7 w channel temperature tch 150 c storage temperature tstg --55 to +150 c electrical characteristics at ta=25 c ratings parameter symbol conditions min typ max unit [n-channel] drain-to-source breakdown voltage v (br)dss i d =1ma, v gs =0 30 v zero-gate voltage drain current i dss v ds =30v, v gs =0 1 m a gate-to-source leakage current i gss v gs = 16v, v ds =0 10 m a cutoff voltage v gs (off) v ds =10v, i d =1ma 1.0 2.4 v forward transfer admittance ? yfs ? v ds =10v, i d =4a 3.7 5.3 s marking : w332 continued on next page. sanyo electric co.,ltd. semiconductor company tokyo office tokyo bldg., 1-10, 1 chome, ueno, taito-ku, tokyo, 110-8534 japan ordering number : enn7134a FW332 package dimensions unit : mm 2129 [FW332] n1502 ts im ta-3869 / 11502 ts im ta-3326 any and all sanyo products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. consult with your sanyo representative nearest you before using any sanyo products described or contained herein in such applications. sanyo assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo products described or contained herein. n-channel and p-channel silicon mosfets motor driver applications 1 : source1 2 : gate1 3 : source2 4 : gate2 5 : drain2 6 : drain2 7 : drain1 8 : drain1 sanyo : sop8 14 5 8 4.4 0.3 6.0 0.2 5.0 0.595 1.27 1.5 0.1 1.8max 0.43 preliminary
FW332 no.7134-2/6 continued from preceding page. ratings parameter symbol conditions min typ max unit r ds (on)1 i d =4a, v gs =10v 55 70 m w static drain-to-source on-state resistance r ds (on)2 i d =2a, v gs =4v 105 145 m w input capacitance ciss v ds =10v, f=1mhz 270 pf output capacitance coss v ds =10v, f=1mhz 90 pf reverse transfer capacitance crss v ds =10v, f=1mhz 55 pf turn-on delay time t d (on) see specified test circuit. 9 ns rise time t r see specified test circuit. 80 ns turn-off delay time t d (off) see specified test circuit. 25 ns fall time t f see specified test circuit. 17 ns total gate charge qg v ds =10v, v gs =10v, i d =4a 7.0 nc gate-to-source charge qgs v ds =10v, v gs =10v, i d =4a 1.3 nc gate-to-drain miller charge qgd v ds =10v, v gs =10v, i d =4a 1.5 nc diode forward voltage v sd i s =4a, v gs =0 0.84 1.2 v [p-channel] drain-to-source breakdown voltage v (br)dss i d =--1ma, v gs =0 --30 v zero-gate voltage drain current i dss v ds =--30v, v gs =0 --1 m a gate-to-source leakage current i gss v gs = 16v, v ds =0 10 m a cutoff voltage v gs (off) v ds =--10v, i d =--1ma --1.0 --2.4 v forward transfer admittance ? yfs ? v ds =--10v, i d =--3a 2.9 4.2 s r ds (on)1 i d =--3a, v gs =--10v 90 115 m w static drain-to-source on-state resistance r ds (on)2 i d =--1.5a, v gs =--4v 160 225 m w input capacitance ciss v ds =--10v, f=1mhz 370 pf output capacitance coss v ds =--10v, f=1mhz 100 pf reverse transfer capacitance crss v ds =--10v, f=1mhz 65 pf turn-on delay time t d (on) see specified test circuit. 8 ns rise time t r see specified test circuit. 45 ns turn-off delay time t d (off) see specified test circuit. 30 ns fall time t f see specified test circuit. 31 ns total gate charge qg v ds =--10v, v gs =--10v, i d =--3a 8.6 nc gate-to-source charge qgs v ds =--10v, v gs =--10v, i d =--3a 1.2 nc gate-to-drain miller charge qgd v ds =--10v, v gs =--10v, i d =--3a 1.8 nc diode forward voltage v sd i s =--3a, v gs =0 --0.85 --1.5 v electrical connection switching time test circuit [n-channel] [p-channel] pw=10 m s d.c. 1% 10v 0v v in p. g 50 w g s FW332 i d =4a r l =3.75 w v dd =15v v out v in d pw=10 m s d.c. 1% 0v --10v v in p. g 50 w g s FW332 i d = --3a r l =5 w v dd = --15v v out v in d d1 d1 d2 d2 s1 g1 s2 g2 (top view)
FW332 no.7134-3/6 0.5 1.0 1.5 2.0 2.5 3.0 --60 --40 --20 0 20 40 60 80 100 120 140 160 012345678910 r ds (on) -- v gs it04018 0 0.2 0 50 100 150 200 250 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 0.4 0.6 0.8 1.0 0.1 0.3 0.5 0.7 0.9 i d -- v ds v gs =3v 4v 5v 6v 10v it03321 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 i d -- v gs v ds =10v 25 c --25 c ta=75 c it03322 r ds (on) -- ta it04019 20 40 60 80 100 120 140 160 0 ta=25 c 4a i d =2a i d =4a, v gs =10v i d =2a, v gs =4v 8v [nch] [nch] [nch] [nch] [nch] [nch] [nch] [nch] 0.1 1.0 7 5 3 2 10 7 5 3 2 10 100 7 5 3 2 7 5 3 2 2 1.0 sw time -- i d t d (on) t d (off) t r t f it04021 ciss, coss, crss -- v ds it04020 0.1 1.0 23 57 23 5 0.1 23 57 57 1.0 23 5 1.0 7 5 3 10 7 5 3 2 ? y fs ? -- i d v ds =10v ta= --25 c it03326 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 i f -- v sd v gs =0 --25 c 25 c ta=75 c 0 5 10 15 20 25 30 10 100 1000 7 5 3 2 7 5 3 2 f=1mhz ciss coss crss it03328 25 c v dd =15v v gs =10v 75 c gate-to-source voltage, v gs -- v drain current, i d -- a drain-to-source voltage, v ds -- v drain current, i d -- a drain current, i d -- a forward transfer admittance, ? y fs ? -- s static drain-to-source on-state resistance, r ds (on) -- m static drain-to-source on-state resistance, r ds (on) -- m gate-to-source voltage, v gs -- v drain current, i d -- a switching time, sw time -- ns drain-to-source voltage, v ds -- v ciss, coss, crss -- pf diode forward voltage, v sd -- v forward current, i f -- a ambient temperature, ta -- c
FW332 no.7134-4/6 v gs -- qg v ds =10v i d =4a it03329 0 012345678 2 4 6 8 10 a s o 0.01 10 1.0 2 3 5 7 2 3 5 7 2 3 5 7 0.1 2 3 10 23 57 1.0 23 57 0.1 23 5 it04022 i dp =16a i d =4a 100ms dc operation 1ms 10ms <10 m s 100 m s operation in this area is limited by r ds (on). r ds (on) -- ta 0 --1 --2 --3 --4 --5 --6 50 100 150 200 300 250 0 50 100 150 200 300 250 0 --7 --8 --9 --10 r ds (on) -- v gs it04027 it04028 i d = --1.5a, v gs = --4v i d = --3.0a, v gs = --10v --60 --40 --20 0 20 40 60 80 100 120 140 160 0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --4.0 --3.5 0 i d -- v gs 0 0 --3.0 --2.5 --2.0 --1.5 --1.0 --0.5 --0.2 --0.5 --1.0 --2.0 --2.5 --3.0 --1.5 --0.4 --0.6 --0.8 --1.0 i d -- v ds it04025 it04026 [pch] [pch] [nch] [nch] [pch] [pch] v ds = --10v 25 c ta=75 c --25 c v gs = --3.0v -- 10.0v -- 4.0v --5.0v -- 6.0v --8.0v i d = --1.5a --3.0a ta=25 c total gate charge, qg -- nc gate-to-source voltage, v gs -- v drain-to-source voltage, v ds -- v drain current, i d -- a ta=25 c single pulse mounted on a ceramic board(2000mm 2 5 0.8mm) 1unit gate-to-source voltage, v gs -- v drain current, i d -- a drain-to-source voltage, v ds -- v drain current, i d -- a static drain-to-source on-state resistance, r ds (on) -- m static drain-to-source on-state resistance, r ds (on) -- m gate-to-source voltage, v gs -- v ambient temperature, ta -- c it04029 it04030 --0.1 23 57 23 5 --1.0 10 1.0 7 5 3 7 5 3 2 ? y fs ? -- i d --0.1 --10 --1.0 7 5 3 2 7 5 3 2 i f -- v sd v gs =0 [pch] [pch] v ds = --10v 75 c 25 c ta= --25 c --25 c 25 c ta=75 c --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.2 --1.1 --1.0 drain current, i d -- a forward transfer admittance, ? y fs ? -- s diode forward voltage, v sd -- v forward current, i f -- a
FW332 no.7134-5/6 0 --5 --10 --15 --20 --25 --30 10 100 1000 7 5 3 2 7 5 3 2 ciss, coss, crss -- v ds --0.1 1.0 23 57 --1.0 23 57 100 10 7 5 3 2 7 5 3 2 sw time -- i d it04031 it04032 [pch] [pch] ciss coss crss f=1mhz v dd = --15v v gs = --10v t d (on) t d (off) t r t f 0 0 -- 2 -- 4 -- 6 -- 8 10 58 7 1369 24 --10 v gs -- qg v ds = --10v i d = --3a it04033 a s o 2 3 5 7 2 3 5 7 2 3 5 7 2 3 --10 --1.0 --0.1 --0.01 23 57 23 57 23 5 --0.1 --1.0 --10 it04034 [pch] [pch] 100ms dc operation 100 m s 1ms 10ms i dp = --12a <10 m s i d = --3a operation in this area is limited by r ds (on). 0 20 40 60 80 100 120 140 160 0 0.4 0.8 1.2 1.4 1.7 2.0 1.6 p d -- ta it04024 1unit p d (fet 1) -- p d (fet 2) it04023 [nch, pch] [nch, pch] drain current, i d -- a switching time, sw time -- ns drain-to-source voltage, v ds -- v ciss, coss, crss -- pf total gate charge, qg -- nc gate-to-source voltage, v gs -- v drain-to-source voltage, v ds -- v drain current, i d -- a allowable power dissipation(fet 2), p d -- w allowable power dissipation(fet 1), p d -- w ambient temperature, ta -- c allowable power dissipation, p d -- w total dissipation ta=25 c single pulse mounted on a ceramic board(2000mm 2 5 0.8mm) 1unit mounted on a ceramic board(2000mm 2 5 0.8mm) 0 0.4 0.8 1.2 1.4 1.6 mounted on a ceramic board(2000mm 2 5 0.8mm) 0 0.4 0.8 1.2 1.4 1.6
FW332 no.7134-6/6 specifications of any and all sanyo products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. sanyo electric co., ltd. strives to supply high-quality high-reliability products. however, any and all semiconductor products fail with some probability. it is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of sanyo electric co. , ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo product that you intend to use. information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. sanyo believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. this catalog provides information as of november, 2002. specifications and information herein are subject to change without notice. ps
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